The EAM Newsletter provides up-to-date information on EAM's research, programs and events.
subcription and archive
Cluster of Excellence
Engineering of Advanced Materials
InN is a semiconductor material with a direct bandgap of ~0.7 eV and is a promising material for applications in next generation photovoltaics such as hot carrier solar cells. InN nanorods are fabricated by a chemical vapor deposition technique using a vapor-liquid-solid growth method. The scanning electron microscopy image (bird’s-eye-view) shows one vertical and six in-plane InN nanorods with a height / length of ~300 nm. The indium metallic droplets on top / at the end of each nanorod indicate a self-catalyzed growth. The study was performed in the framework of EAM in cooperation with the Max Planck Institute for the Science of Light.
Tessarek, C.; Fladischer, S.; Dieker, C.; Sarau, G.; Hoffmann, B.; Bashouti, M.; Göbelt, M.; Heilmann, M.; Latzel, M.; Butzen, E.; Figge, S.; Gust, A.; Höflich, K.; Feichtner, T.; Büchele, M.; Schwarzburg, K.; Spiecker, E.; Christiansen, S.
Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal−Organic Vapor Phase Epitaxy.
Nano Lett. 2016, 16, 3415 –3425.